Dr. Vincent Donnelly, Professor

Department of Chemical and Biomolecular Engineering, Cullen College of Engineering

FACULTY WEBSITE

Expand All Collapse All

• Areas of expertise

  • Semiconductor materials device processing.
  • Plasma Processing
  • Nanopantography

• Awards

  • 2013-2014 Fluor Corporation Faculty Excellence award
  • 2011 John A. Thorton Memorial Award and Lecture
  • 2010 Excellence in Research and Scholarship Award
  • 2007: Graduate Program Director
  • 2007: Cullen College of Engineering Senior Research Award
  • 2006-2007: Session Organizer for the American Institute of Chemical Engineers Annual Symposium.
  • 2005: Program Committee for the 2005 International Dry Process Symposium, Japan
  • 2005: Program Committee for the 2005 International Conference on Reactive Plasmas, Japan
  • 2005: Topic Organizer for the 2006 IEEE International Conference on Plasma Science
  • 2004: Session Organizer for the 2004 IEEE International Conference on Plasma Science
  • 2003: Plasma Prize, American Vacuum Society Plasma Science and Technology Division
  • 2000-2003: Advisory Committee of The Industrial Physicist
  • 1999-2001: Chair of the American Vacuum Society Plasma Science and Technology
  • 1997: Fellow, American Vacuum Society
  • 1995-1998: Member of the National Research Council's Plasma Science Committee
  • 1995-2001: Sematech Plasma Diagnostics Process Technical Advisory Board member
  • 1993: AT&T Bell Laboratories Distinguished Member of Technical Staff Award
  • 1991: Tegal Corporation Thinker Award in Recognition of Pioneering Research in the Application of Optical Diagnostic Techniques to Plasma Processing

• Publications

  • S. Tian, V. M. Donnelly, and D. J. Economou, 3. “Transfer of nanopantography-defined patterns using highly selective plasma etching” , J. Vac. Sci. Technol. B 33, 030602-1, 2015
  • E. Karakas, S. Kaler, Q Lou, V. M. Donnelly, and D. J. Economou, “Measurement of absolute CO number densities in CH3F/O2 plasmas by optical emission self-actinometry” J. Phys. D: Appl. Phys. 47, 085203, 2014
  • W. Zhu, S. Sridhar, L. Liu, E. Hernandez, V. M. Donnelly, and D. J. Economou, 2. “Photo-Assisted Etching of Silicon in Chlorine- and Bromine-Containing Plasmas” , J. Appl. Phys., 115, 203303, 2014
  • E. Karakas, V. M. Donnelly, and D. J. Economou, “Optical emission spectroscopy and Langmuir probe diagnostics of CH3F/O2 inductively coupled plasmas”, J. Appl. Phys., 113, 213301, 2013
  • Erdinc Karakas, Vincent M. Donnelly and Demetre J. Economou, “Abrupt transitions in species number densities and plasma parameters in a CH3F/O2 inductively coupled plasma,” Appl. Phys. Lett., 102, 034107, 2013
  • H. Shin, W. Zhou, L. Liu, S. Sridhar, V. M. Donnelly, D. J. Economou, C. Lenox, and T. Lii, “Selective Etching of TiN over TaN and vice-versa in Chlorine-Containing Plasmas,” J. Vac. Sci. Technol. A, 31, 031305, 2013
  • V. M. Donnelly and A. Kornblit, "Plasma etching: Yesterday, today, and tomorrow", J. Vac. Sci. Technol. A 31, 050825, 2013
  • Belostotskiy, S. G.; Ouk, T.; Donnelly, V. M.; Economou, D. J.; Sadeghi, N., Time- and space-resolved measurements of Ar(1s(5)) metastable density in a microplasma using diode laser absorption spectroscopy. Journal of Physics D-Applied Physics 2011, 44 (14)., 2011
  • Diomede, P.; Economou, D. J.; Donnelly, V. M., Particle-in-cell simulation of ion energy distributions on an electrode by applying tailored bias waveforms in the afterglow of a pulsed plasma. Journal of Applied Physics 2011, 109 (8)., 2011
  • Donnelly, V. M.; Guha, J.; Stafford, L, Critical review: Plasma-surface reactions and the spinning wall method. Journal of Vacuum Science & Technology A 2011, 29 (1)., 2011
  • Mattei, S.; Boudreault, O.; Khare, R.; Stafford, L.; Donnelly, V. M., Characterization of a low-pressure chlorine plasma column sustained by propagating surface waves using phase-sensitive microwave interferometry and trace-rare-gas optical emission spectroscopy. Journal of Applied Physics 2011, 109 (11)., 2011
  • Shin, H.; Zhu, W. Y.; Xu, L.; Donnelly, V. M.; Economou, D. J., Control of ion energy distributions using a pulsed plasma with synchronous bias on a boundary electrode. Plasma Sources Science & Technology 2011, 20 (5)., 2011
  • For more publications, visit the publications tab on: http://www.chee.uh.edu/faculty/donnelly

• Patents

  • • Economou, Demetre J., Lee Chen, and Vincent M. Donnelly. Hyperthermal Neutral Beam Source and Method of Operating. Tokyo Electron Limited, assignee. Patent 7358484. 15 Apr. 2008. Print.
    • Donnelly, Vincent M., Jr., Avinoam Kornblit, and Kalman Pelhos. Device Having a High Dielectric Constant Material and a Method of Manufacture Thereof. Agere Systems Inc., assignee. Patent 6511872. 28 Jan. 2003. Print.
    • Donnelly, Vincent M., and Robert F. Karlicek, Jr. Deposition of III-V Semiconductor Materials. AT&T Laboratories, assignee. Patent 4645687. 24 Feb. 1987. Print.
    • Cook, Joel M., Vincent M. Donnelly, Daniel L. Flamm, Dale E. Ibbotson, and John A. Mucha. Etching Techniques. AT&T Bell Laboratories, assignee. Patent 4498953. 12 Feb. 1985. Print.
    • Donnelly, Vincent M., Daniel L. Flamm, and Dale E. Ibbotson. Crystallographic Etching of III-V Semiconductor Materials. Bell Telephone Laboratories, Incorporated, assignee. Patent 4397711. 9 Aug. 1983. Print.
    • Donnelly, Vincent M., and Daniel L. Flamm. Plasma-assisted Etch Process with Endpoint Detection. Bell Telephone Laboratories, Incorporated, assignee. Patent 4377436. 22 Mar. 1983. Print.
    • Donnelly, Vincent M., and Robert F. Karlicek, Jr. Radiation Induced Deposition of Metal on Semiconductor Surfaces. Bell Telephone Laboratories, Incorporated, assignee. Patent 4359485. 16 Nov. 1982. Print.

  
  

  For more patent information, visit: https://patents.justia.com/search?q=vincent+donnelly

• Grants and Funded Research

  • National Science Foundation four year, $1.5 million grant for nanopatterning technology.

• Curriculum Vitae

  • Vincent Donnelly CV

• Contact information

  Engineering Building 1, S232

  Phone: 713-743-4313 | Fax: 713-743-4323

  vmdonnelly@uh.eduu