Photomask Fabrication
Andrew Eckert
Photomsk, Inc.
Date: November 2, 2007, Time: 3:30 pm, Location: W122-D3 Engineering Building 1, The University of Houston
Abstract:
This talk will start with an overview of photomask fabrication for semiconductor lithography. Emphasis will be placed on electon beam lithography, which is the main pattern generation technique used for today’s most critical technologies. The fundamental challenge for electron beam lithography is the “proximity” effect, and how to compensate for unwanted exposure from back scattered electrons. The next part of the talk will describe various resist platforms from a chemical perspective. The last section of the talk will discuss the optical advantages of Toppan’s high-end phase shifting mask products.
