Nacer Badi, Ph.D

Employment history:

May.99- Present   Research Scientist, Physics, University of Houston

In charge of the development of BN-CN-TiN-TaN materials for high power & high temperature device, field emitter, and tribological applications.

Feb.97- Apr.99      Research associate, University of Houston - Space Vacuum Epitaxy Center

Involved in:

1. BN/CN/TiN nitride materials development for tribology and high temperature device applications using ECR and ion sources assisted PVD technique;

2. PVD growth and characterization of Nitride related Materials and device fabrication. – Modeling/simulation of fundamental processes - proposals writing - play an active role in the technical community by reporting, publishing (more than 30 technical papers, R&D results, etc.) - responsible for supervision of one graduate student and one undergraduate student for material growth and characterization.

Sep. 94- Jan 97     Staff researcher, University of Houston - Space Vacuum Epitaxy Center

Performed research in nitride growth and characterization of deposited films; upgrading, trouble shooting and maintenance of process equipment; writing publications, and Involved in proposals

Education:

Ph.D. University of Sidi Bel-Abbes/University of Houston – 1996 Physics
M.S. University of Sidi Bel-Abbes - 1992 Microelectronics
EE. University of Science and Technology of Oran – 1989 Electronics

Research Activities/Interest:

Materials Science of Thin Films: achievement of BN/CN thin films -based cold cathode applications; achievement of BN/CN/TiN materials films with excellent tribological properties; demonstration of high temperature boron nitride diode and different MIS structures based BN/GaN and BN/SiC materials; report for the first time a local pulsed UV laser annealing of CN films; report for the first time the use of a novel multiphoton laser excitation technique to obtain higher photoconductivity (PC) signal BN wide band gap materials; feasibility study and deposition of single and multi-capacitor based on BN/TiN,TaN,Al,Pt,Ti,Cu materials for high energy storage-high frequency-high temperature needs. Modeling and Simulation: report for the first time, the major chemical trends in the deep-energy levels of isolated sp³-bonded substitutional native defects in boron nitride; proposition of a model based on experimental results suggesting nitrogen vacancies for n-type and boron antisite or impurities for p-type BN films; study the electronic band structure, charge density, density of states of most binary and ternary semiconductor alloys subjected to external parameters (i.e. pressure, temperature)

Interest: multilayer ceramic capacitor/actuators chips MLC3’s, electron field emitters based nitride materials; modeling, fabrication technologies and applications of semiconductor devices; MEMS devices based nitride materials; new class of hard coating materials for advanced tribological applications.

Selected publications:    (out of a total of 50 publications/presentations):

1. " X-ray induced modification of BN thin films electronic properties". V. Ageev, M. Ugarov, V. Frolov, A. Karabutov, E. Loubnin, N. Badi and A. Bensaoula, JAP- AIP ID 073024, 2000 (in press).

2. "Laser-Induced Modifications of Carbon Nitride Films", N. Badi, D. Starikov, A. Bensaoula, V. Ageev, A. Karabutov, M. Ugarov, and E. Loubnin , JAP- AIP ID 036021, 2000 (in press).

3. "Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas", N. Medelci, A. Tempez, D. Starikov, N. Badi, I. Berishev, and A. Bensaoula, Journal of Electronic Materials 29, 1079 (2000).

4. "Boron Nitride-based Multilayer Ceramic Capacitor Chips (MLC3’s) for High Temperature Applications" N. Badi, D. Starikov, and A. Bensaoula, JEM 2000 (submitted)

5. "Field Emission from as-grown and Surface Modified BN and CN Thin Films" N. Badi, A. Tempez, D. Starikov, A. Bensaoula, V.P.Ageev, A. Karabutov, M.V. Ugarov, V. Frolov, E. Loubnin, K. Waters and A. Shultz, J. Vac. Soc.Technol. A 17, 1191 (1999).

6. "Enhanced free carrier generation in boron nitride films by pulsed laser radiation" V. Ageev, S. Klimentov, M. Ugarov, E. Loubnin, A. Bensaoula, N. Badi, A. Tempez, and D. Starikov, App. Surf. Sci. 138-139, 364-369 (1999).

7. "Surface composition of BN, CN, and BCN thin films" A. Tempez, N. Badi, J. Kulik, and A. Bensaoula, J. Vac. Soc.Technol. A 16, 2896 (1998)

8. "Boron carbon nitride materials for tribological and high temperature device applications" N. Badi, A. Tempez, D. Starikov, V. Zomorrodian, N. Medelci, A. Bensaoula, J. Kulik, S. Lee, S. S. Perry, V. P. Ageev, S. V. Garnov, M. V. Ugarov, S. M. Klimentov, V. N. Tokarev, K.Walters, and A.Schultz, , Space Technology and Applications International Forum, Albuquerque, New Mexico, AIP, p 666 (1998).

Patent:

   "Boron Nitride based Multilayer Ceramic Capacitors Chips (MLC3s) for High-Energy Density Storage and Method of Manufacture thereof" (under process).

[click here to see a complete resume]