VITAE

Badi Nacer, Ph.D

Business and mailing address:

University of Houston
Space Vacuum Epitaxy Center
4800 Calhoun Road
Science & Research Bldg. One
Houston, TX, 77204-5507
Phone: (713) 743 3621
Fax: (713) 747 7724
E-mail: Badi@ orbit.svec.uh.edu

Home address: 2767 Briargrove # 560
Houston, Tx 77057
Tel: (713) 975-6455

Education:

Ph.D. University of Sidi Bel-Abbes/University of Houston – 1996    Physics

The related experimental work (3 years) has been achieved at the Space Vacuum Epitaxy Center
University of Houston - USA      http://www.svec.uh.edu/

"My thesis dealt with the growth and characterization of deposited nitride thin films by
ion and neutral assisted molecular beam epitaxy" Abstract

M.S. University of Sidi Bel-Abbes - Algeria 1992    Microelectronics

"My dissertation dealt with strain in ternary semiconductor alloy based (Ga,Al,P)"

EE. University of Science and Technology of ORAN - Algeria 1989    Electronics

"My dissertation dealt with the conception and realization of data acquisition system
for artificially vision applied to robotics"

Employment history:

• Research:

May.99- Present      Research Scientist at the Space Vacuum Epitaxy Center

In charge of the development of BN/CN/TiN materials for field emission, tribological, and high power high temperature device applications.

Feb.97- Apr.99       Research associate, University of Houston - Space Vacuum Epitaxy Center
Involved in:

1. BN/CN/TiN nitride materials development for tribology and high temperature device applications using ECR and ion sources assisted PVD technique;
2. PVD growth and characterization of Nitride related Materials and device fabrication. – Modeling/simulation of fundamental processes - proposals writing - play an active role in the technical community by reporting, publishing (more than 30 technical papers, R&D results, etc.) - responsible for supervision of one graduate student and one undergraduate student for material growth and characterization.

Sep. 94- Jan 97       Researcher at the Space Vacuum Epitaxy Center

1. Performed research in nitride growth and characterization of deposited films;
2. Modeling and simulation of fundamental processes;
3. Upgrading, trouble shooting and maintenance of process equipment;
4. Wrote publications.
5. Involved in ATP/ARP proposals (ARP grant 95/97:" Carbon Nitride and Carbon Nitride/Titanium Nitride Multi-layers Synthesis for hard Coating Applications ": A. Bensaoula/A. Bousetta/J. Kulik)

• Teaching and other responsibilities:

Sep. 89 - June 94     Assistant professor (Lecturer) at the University of Sidi Bel-Abbes (Algeria).

1. Classes taught: Solid State Physics, Integrated electronics and circuits design, Electronics and Electrical measurements, Robotics, Mathematics/Physics, and Technical English.
2. Head of the D.E.A electronic department at the University of Sidi Bel-Abbes - Algeria
3. Supervising six final year students in electrical engineering
4. Active member in Computational Materials Science Laboratory- Sidi Bel-Abbes - Algeria

Goals and Interests:

My objective is to use my scientific background, technical abilities, and skills to be part of a successful and productive research/industrial teams involved in PVD/CVD growth and characterization of nitride related materials and device fabrication.

My scientific interests include, but are not limited to:

• Growth techniques based PVD/CVD systems, characterization and application of well-know and semiconductor materials;
• Electron field emitters based nitride materials;
• Multilayer ceramic capacitor/actuators chips MLC3’s;
• MEMS devices based nitride materials;
• New class of hard coating materials for advanced tribological applications;
• Modeling, fabrication technologies and applications of semiconductor devices.

Demonstration in the field:

• Initiated the feasibility and deposition of single and multi-capacitor based on BN,TiN,TaN,SiO₂ Al, Pt, Ti, Cu materials for high energy storage-high frequency-high temperature needs;
• Achieved BN/CN thin films -based cold cathode applications;
• Achieved BN/CN/TiN materials films with excellent tribological properties;
• Demonstrated high-temperature boron nitride diode and different MIS structures based BN/GaN and BN/SiC materials.
• Reported for the first time, the major chemical trends in the deep-energy levels of isolated sp³-bonded substitutional native defects in boron nitride;
• Proposed a model based on experimental results suggesting nitrogen vacancies for n-type and boron antisite or impurities for p-type BN films;
• Reported for the first time a local pulsed UV laser annealing of CN films;
• Reported for the first time the use of a novel multiphoton laser excitation technique to obtain higher photoconductivity (PC) signal BN wide band gap materials.

Funded Projects:

• "Multilayer Ceramic Capacitor Chips (MLC3s) for High-Energy Density Storage and High Frequency Power Switching Device Applications" STTR – DOD # BMDO98T-002 ® InPod, Inc., Electronics and Photonics

Pending Project:

• "Development of Nitride-Based Field Emitters for Efficient Microchips Cooling", SBIR-DoD # DARPA SB002-042: IMS, Inc., Integrated Electronic/Photonic Cooling Devices Based on Hot Electron Emission.

• "III- Nitride based field emitters for microdevices applications", NSF-ECS/ Electronics, Photonics & Device Technologies - 2000

Patent:

"Boron Nitride based Multilayer Ceramic Capacitors Chips (MLC3s) for High- Energy Density Storage and Method of Manufacture thereof" (under process).

Skills:

• Growth techniques based PVD/CVD systems;
• Material science and vacuum knowledge;
• Upgrading, trouble shooting and maintenance of process equipment;
• Characterization: (Auger, Hall, FTIR, SIMS, I-V, C-V, UV, Field emission, and Laser PC);
• Strong theoretical background in solid state physics;
• Modeling and simulation capabilities using Fortran, Pascal, Assembler and Basic programming languages;
• Working experience with workstations (VMS, UNIX) and personnel computers;
• Work with deadline;
• Excellent oral and written communication.

Special Skills

Knowledge of Fortran language to develop research-oriented programs in the field of electronic and optical properties of crystalline stressed semiconductors: energy band spectra, lattice dynamics, and charge densities of solids. Specialized in using pseudopotential -based approaches to determine the electronic properties of elemental and compound semiconductors.

Affiliation:

• Member of Materials Research Society (MRS)
• Member of American Vacuum Society (AVS)

Awards:

• Sigma Xi Research Day, University of Houston Chapter, April 1998.
• Best poster nominee: MRS Conference, December 97

Best qualities:

• I value work;
• I am dedicated, motivated and like to help people;
• I am versatile and can easily and quickly adapt to change;
• I am always seeking excellence through self-criticism and self-improvement;
• I have a positive mental attitude;
• I always stay focused on doing my best possible work.

Publications in reviewed journals

1. V. Ageev, M. Ugarov, V. Frolov, A. Karabutov, E. Loubnin, N. Badi and A. Bensaoula, " X-ray induced modification of BN thin films electronic properties", JAP 2000 (in press).
2. N. Badi, D. Starikov, A. Bensaoula, V. Ageev, A. Karabutov, M. Ugarov, and E. Loubnin, "Laser-Induced Modifications of Carbon Nitride Films", JAP, 2000 (in press).
3. N. Medelci, A. Tempez, D. Starikov, N. Badi, I. Berishev, and A. Bensaoula, "Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas", Journal of Electronic Materials 29, 1079 (2000).
4. N. Badi, D. Starikov, and A. Bensaoula, "Boron Nitride-based Multilayer Ceramic Capacitor Chips (MLC3’s) for High Temperature Applications", Journal of Electronic Materials 2000 (submitted)
5. V. Ageev, S. Klimentov, M. Ugarov, E. Loubnin, A. Bensaoula, N. Badi, A. Tempez, and D. Starikov "Enhanced free carrier generation in boron nitride films by pulsed laser radiation", App. Surf. Sci. 138-139, 364-369 (1999).
6. N. Badi, A. Tempez, D. Starikov, A. Bensaoula, V.P.Ageev, A. Karabutov, M.V. Ugarov, V. Frolov, E. Loubnin, K. Waters and A. Shultz, "Field Emission from as-grown and Surface Modified BN and CN Thin Films" J. Vac. Soc.Technol. A 17, 1191 (1999)
7. Tempez, N. Medelci, N. Badi, I. Berichev, D. Starikov, and A. Bensaoula, " Photoenhanced RIE of III-V Nitrides in BCl₃/Cl₂/Ar/N₂ Plasmas", J. Vac. Soc.Technol. A 17, 2209 (1999)
8. D. Starikov, N. Badi, I. Berichev, N. Medelci, O. Kameli, M. Sayhi, V. Zamorrodian, and A. Bensaoula "MIS Schottky Barrier Structures Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Optoelectonic Device Applications", J. Vac. Soc.Technol. A 17, 1235 (1999).
9. Tempez, N. Badi, J. Kulik, and A. Bensaoula, "Surface composition of BN, CN, and BCN thin films", J. Vac. Soc.Technol. A 16, 2896 (1998)
10. N. Badi, A. Bousetta, A. Bensaoula, and H. Aourag, "Dynamical Charge and Force Constant Calculations in c-BN under Pressure", Phys.Stat.Sol.(b) 198, 721 (1996).
11. N. Badi, H. Abid, B. Soudini, N. Amrane, M. Driz, B. Khelifa , and H. Aourag, "Valence and conduction band-edges-charge densities in Ga_1-xAl_xP mixed crystals", Mater.Chem.Phys 38, 243 (1994).
12. N. Badi, H. Abid, B. Soudini, N. Amrane, M. Driz, J.P. Dufour, H. Aourag, and B. Khelifa, "The uniaxial strain effects on the ternary alloy semiconductor Ga_1-xAl_xP", Phys.Stat.Sol (b) 184, p 365 (1994).
13. N. Badi, N. Amrane, H. Abid, M. Driz, B. Soudini, B. Khelifa, and H. Aourag, "Pressure dependent properties of boron phosphide", Phys.Stat.Sol (b) 185, 379 (1994).
14. N. Badi, H. Abid, B. Soudini, N. Amrane, M. Hammadi, M. Driz, B. Khelifa, and H. Aourag, "Band structure of Ga_1-xAl_xP under uniaxial stress", Comp.Mat.Sci 3, 50 (1994).
15. H. Abid, N. Badi, B. Soudini, N. Amrane, M. Driz, M. Hammadi, H. Aourag, and B. Khelifa, "Pressure dependence of band gaps in GaAs, GaP, InP, and InAs", Mater.Chem.Phys 38, 162 (1994).
16. F. Benkabou, N. Badi, J.P. Dufour, T. Kobayasi, H. Nara, B. Khelifa, and H. Aourag, "Pressure dependence of band gaps and the charge densities in Si", Phys.Stat.Sol (b) 109, 109 (1994).
17. M. Driz, N. Badi, B. Soudini, N. Amrane, H. Abid, N. Bouarissa, B. Khelifa, and H. Aourag, "The alloying and pressure dependence of band gaps in GaAs and GaAs_XP_1-x", Comp.Mater.Sci. 2, 287 (1994).
18. H. Aourag, F. Sellal, H. Abid, N. Badi, A. Mahmoudi, and B. Khelifa, "The high pressure pressure behavior of AlAs", Mater.Chem.Phys. 33, 254 (1993).
19. H. Aourag, G. Merad, K. Ghaffour, H. Abid, N. Badi, and B. Khelifa, "The high pressure behavior of InSb and b -SiC", Comp.Mater.Sci. 1, 78 (1992).
20. M. Driz, H. Aourag, H.Abid, B. Khelifa, and N. Badi, " The pseudobinary alloy (Ga, Al)As under hydrostatic pressure", Mater.Sci.Eng B25, 159 (1994).
21. F. Driss-Khodja, H. Abid, B. Khelifa, N. Amrane, B. Soudini, M. Driz, N. Badi, and H. Aourag, "Electronic structure of pseudobinary semiconductor alloy Ga_XAl_1-XSb", Mater.Sci.Eng B27, 93 (1994).
22. H. Kalaî, N. Badi, H. Abid, N. Amrane, B. Soudini, H. Aourag, and B. Khelifa, "Correlation between high pressure effects and alloying in GaP and AlP", Mater.Chem.Phys 39, 180 (1995).
23. H. Abid, N. Badi, M. Driz, N. Bouarissa, KH. Benkabou, B. Khelifa, and H. Aourag, "Electronic structure of the quaternary alloy Ga_XIn_1-XAs_yP_1-y", Mater.Sci.Eng B33, 133 (1995).
24. B. Soudini, N. Amrane, N. Badi, B.Khelifa, and H. Aourag, "Positron annihilation studies in Ga_XIn_1-XAs", Sol.Stat.Commun.96, 987 (1995).
25. S. Al.Khafadji, N. Amrane, N. Bouarissa, N. Badi, B. Soudini, M. Sehil, and H. Aourag, "Positron annihilation in elemental semiconductors", Phys.Stat.Sol (b) 189, 139 (1995).

Publications in non-reviewed journals

1. N. Badi, A. Tempez, D. Starikov, V. Zomorrodian, J. Kulik, V.P.Ageev, S.Klimentov, S.Garnov, S. Lee and S. S. Perry, and A. Bensaoula, "Investigation of BN, CN, and BCN Thin Films for Tribology, Electronic, and Optical Applications" J. Adv. Mater, 2000 (in press).
2. N. Badi, A. Tempez, D. Starikov, V. Zomorrodian, N. Medelci, A. Bensaoula, J. Kulik, S. Lee, S. S. Perry, V. P. Ageev, S. V. Garnov, M. V. Ugarov, S. M. Klimentov, V. N. Tokarev, K.Walters, and A.Schultz, "Boron carbon nitride materials for tribological and high temperature device applications", Space Technology and Applications International Forum, Albuquerque, New Mexico, AIP, p 666 (1998).
3. N. Medelci , A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, and A. Bensaoula, "Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl₂ and BCl₃/Cl₂/Ar Chemistries", MRS conference, San Francisco , April 1998, Vol 512, "Wide band Gap Semiconductors for High power High Frequency and High Temperature Devices", S. Den Baars et al. Eds 1998.
4. N. Badi , A. Tempez, J. Kulik, D. Starikov, N. Medelci, S.M. Klimentov, S.V.Garnov, V.P.Ageev, M.V. Ugarov, K. Water, A. shultz, and A. Bensaoula "Boron Nitride Materials for Tribological and High Temperature High Power Devices", Mat. Res. Soc. Symp. Proc, Vol 495, p.359 (1998).
5. N. Badi, A. Bousetta, M. Lu, and A. Bensaoula, "Effect of the Growth Process on Boron Nitride Thin Films Electrical Properties", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 849-853.
6. D.N. Talwar, N. Badi, A. Bousetta, and A. Bensaoula, "Energetic States of Isolated Native Defects in Cubic Boron Pnictides", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 859-862.
7. Bousetta, N. Badi, A. Bensaoula, and M. Lu, "Synthesis and Characterization of Co-Deposited Carbon Nitride and Boron Materials", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 877-880.

Presentations

1. N. Badi, D. Starikov, and A. Bensauola, " Boron Nitride-based Multilayer Ceramic Capacitor Chips (MLC3’s) for High Temperature Applications", 46^th National Symposium of the American Vacuum Society, Seattle, Oct 1999
2. D. Starikov, I. Berishev, J.-W. Um, N. Badi, N. Medelci, A. Tempez, and A. Bensauola, "Diode Structures Based on p-GaN for Optoelectronic Applications in the Near-UV Range of the Spectrum" 46^th National Symposium of the American Vacuum Society, Seattle, Oct 1999
3. N. Badi, A. Tempez, D. Starikov, A. Bensaoula, V.P.Ageev, A. Karabutov, M.V. Ugarov, V. Frolov, E. Loubnin, K. Waters and A. Shultz, "Field Emission from as-grown and Surface Modified BN and CN Thin Films", 45^th National Symposium of the American Vacuum Society, Baltimore, Nov 1998
4. D. Starikov, N. Badi, I. Berichev, N. Medelci, O. Kameli, M. Sayhi, V. Zamorrodian, and A. Bensaoula "MIS Schottky Barrier Structures Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Optoelectonic Device Applications", 45^th National Symposium of the American Vacuum Society, Baltimore, Nov 1998
5. Tempez, N. Medelci , N. Badi, I. Berichev, D. Starikov, and A. Bensaoula, "Photoenhanced Reactive Ion Etching of III-V nitrides BCl₃/Cl₂/Ar/N₂ plasmas", 45^th National Symposium of the American Vacuum Society, Baltimore, Nov 1998
6. N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, A. Bensaoula, A. Chourasia, and W. Zagozdzon-Wosik " Reactive Ion etching of BN and GaN using Cl₂/Ar and BCl₃/Cl₂/Ar Plasmas", The third European GaN Workshop. June 22-24, Warsaw, Poland 1998.
7. N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, A. Chourasia, and A. Bensaoula " Reactive Ion etching of BN and GaN using Cl₂/Ar and BCl₃/Cl₂/Ar Plasmas", Texas Surface Science Round up, May 27, 1998.
8. D. Starikov, N. Badi, I. Berichev, N. Medelci, A. Tempez, V. Zomorrodian, A. Shultz, and A. Bensaoula "Boron Nitride Insulating Interfacial Layers for High Temperature Diodes Based on Wide Band Gap Semiconductors", 4^th International High Temperature Electronic Conference, Albuquerque, New Mexico, June 14, 1998
9. N. Medelci , A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, and A. Bensaoula, "Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl₂ and BCl₃/Cl₂/Ar Chemistries", MRS conference, San Francisco , April 1998, Vol 512, "Wide band Gap Semiconductors for High power High Frequency and High Temperature Devices", S. Den Baars et al. Eds 1998.
10. N. Badi , A. Tempez, J. Kulik, D. Starikov, N. Medelci, S.M. Klimentov, S.V.Garnov, V.P.Ageev, M.V. Ugarov, K. Water, A. shultz, and A. Bensaoula "Boron Nitride Materials for Tribological and High Temperature High Power Devices" MRS conference, Boston, December 1997 ,Vol 495, p.359" Chemical Aspects of Electronic Ceramics Processing", P.N. Kumta et al., eds. 1998
11. Tempez, N. Badi, D. Starikov, and A. Bensaoula, "Nitride Materials for Tribological and Electronic Applications", Poster Presentation at the Natural Sciences and mathematics Alumni Student Challenge, University of Houston, February 1998.
12. Tempez, N. Badi, D. Starikov, and A. Bensaoula, " Nitride Materials for Tribological and Electronic Applications" Poster Presentation at the Sigma Xi Research Day, University of Houston Chapter, April 1998.
13. "Employment of Boron Nitride Insulating Layers for High Temperature Diode Structures Based on Wide Band Gaps Semiconductors Materials", D. Starikov, N. Badi, I. Berichev, N. Medelci, A.Tempez, V. Zomorrodian, and A. Bensaoula, High Temperature Electronic Materials and Devices Conference, February 1998, San Diego, CA.
14. Tempez, N. Badi, A. Bensaoula, J. Kulik, V.P. Ageev, S. Klimentov S. Garnov, S. Lee, and S.S. Perry "Synthesis and characterization of BN and BCN thin films for tribological applications", Oral presentation at the 44^th National Symposium of the American Vacuum Society, San Jose, Oct 1997.
15. N. Badi, A. Tempez, A. Bensaoula, K. Waters, and A. Shultz, " Synthesis and Characterization of BN and BCN thin films by Ion and Neutral Assisted Molecular Beam Deposition" AVS Symposium, on Electronic Materials, Processing and Characterization, Texas chapter June 97
16. N. Badi, A. Bousetta, M. Lu, and A. Bensaoula, "Effect of the Growth Process on Boron Nitride Thin Films Electrical Properties", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 849-853.
17. D.N. Talwar, N. Badi, A. Bousetta, and A. Bensaoula, "Energetic States of Isolated Native Defects in Cubic Boron Pnictides", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 859-862.
18. Bousetta, N. Badi, A. Bensaoula, and M. Lu, "Synthesis and Characterization of Co-Deposited Carbon Nitride and Boron Materials", Applications of Diamond Films and related Materials: Third International Conference, 1995, PP 877-880.

Book chapter on nitride materials: Contribution underway.