Curriculum Vitae

Name: Abdelhak Bensaoula
Address: SVEC, University of Houston, S&R1 Rm724, Houston, Texas, 77204-5507
Tel: (713)-743-3621
Fax: (713)-747-7724
Email: Bens@Jetson.uh.edu

EDUCATION

Ph.D. University of Houston 1990 Physics

PROFESSIONAL EXPERIENCE

2000- Present Full Research Professor of Physics, University of Houston

1992- 2000 Research Associate Professor, University of Houston

1990-1992 Research Assistant Professor, University of Houston

RESEARCH INTERESTS

1. Novel In-situ surface analysis techniques applied to real time monitoring of thin film deposition processes
2. Development of compound semiconductors alloys and heterostructures for advanced optoelectronics applications
3. Fabrication of miniature sensors for environmental and biomedical applications

RESEARCH ACHIEVEMENTS SUMMARY

(1995- 1998) Project Leader of the Nitride Materials and Devices Group
Developed a Multi-faceted Nitride Materials program at the Space Vacuum Epitaxy Center:

1. Developed MBE, GS-MBE, and CBE Growth capabilities
2. Demonstrated high GaN growth rate by a Modified ECR source
3. Demonstrated in-situ time of flight ion scattering for thin film surface composition and structure determination
4. Demonstrated enhanced field emission properties from various nitride materials
5. Demonstrated nitride based junction devices operating at above 600 °C
6. Demonstrated pre-breakdown luminescence devices using BN/GaN
7. Demonstrated RIE and photo-enhanced RIE of BN and III-Nitride materials

(1992 –1995)
Initiated a program for high efficiency Photovoltaic research using chemical beam epitaxy. This program is continuing under Professor Alex Freundlich.

(1992- 1995)
Set up the molecular beam and chemical beam epitaxy facilities at SVEC. Developed a reactor for MBE deposition of high temperature superconductors. Initiated the first pulsed laser deposition effort of the high Tc materials at the University of Houston.

MEMBERSHIP in PROFESSIONEL and HONOR SOCIETIES

AVS, IEEE, Sigma Xi

Selection of Recent Reviewed Publications (out of 135 reviewed publications total)

• "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1"; A. H. Bensaoula, I. Ruzakova, and A. Bensaoula, Microelectronics Journal 31(2000) 311-322.
• "In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions"; E. Kim, I. Berishev, and A. Bensaoula; and J. A. Schultz J. Vac. Sci. Technol.B;Vol.17 (3), pp. 1209-1213 (1999).
• "Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas"; A. Tempez, N. Medelci, N. Badi, I. Berishev, D. Starikov, and A. Bensaoula; J. Vac. Sci. Technol. A; Vol.17 (4), pp. 2209-2213 (1999).
• "Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films"; I. Berishev, E. Kim, A. Fartassi, M. Sayhi, and A. Bensaoula; J. Vac. Sci. Technol. A, Vol. 17 (4), pp. 2166-2169 (1999).
• "Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications"; D. Starikov, N. Badi, I. Berishev, N. Medelci, O. Kameli, M. Sayhi, V. Zomorrodian, and A. Bensaoula; J. Vac. Sci. Technol. A, Vol.17(4), pp. 1235-1238 (1999).
• "Field emission from as-grown and surface modified BN and CN thin films"; N. Badi, A. Tempez, D. Starikov, and A. Bensaoula; and V. P. Ageev, A. Karabutov, M. V. Ugarov, V. Frolov, and E. Loubnin; and K. Waters and A. Schultz; J. Vac. Sci. Technol A, Vol.17(4),pp. 1191-1195 (1999).
• "Laser-induced modification of electron field emission from nanocrystalline diamond films"; M. V. Ugarov, V. P. Ageev, A. V. Karabutov, E. N. Loubnin, S. M. Pimenov, and V. I. Konov; and A. Bensaoula; J. Applied Physics, Vol.85(12), pp. 8436-8440 (1999).
• "The Use of Multilayer Neural Networks in Material Synthesis"; Abdelhak Bensaoula, Heidar A. Malki, and A. Marcellino Kwari; IEEE Transac. Semi. Manufac., Vol. 11, p. 421, No. 3, August 1998.

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