1990-1992 Research Assistant Professor, University of Houston

Space Vacuum Epitaxy Center

1988-1999 Senior Research scientist, University of Houston

Space Vacuum Epitaxy Center

1986-1988 Research Scientist, University of Houston

Space Vacuum Epitaxy Center

RESEARCH ACHIEVEMENTS SUMMARY

(1995- 1998) Project Leader of the Nitride Materials and Devices Laboratory

Developed a Multi-faceted Nitride Materials program at the Space Vacuum Epitaxy Center:

2: Demonstrated high GaN growth rate by a Modified ECR source

4: Demonstrated nitride based junction devices operating at above 600 C

5: Demonstrated pre-breakdown luminescence devices using BN/GaN

Initiated a program for high efficiency Photovoltaic research using chemical beam epitaxy. This program is continuing under Professor Alex Freundlich.

Set up the molecular beam and chemical beam epitaxy facilities at SVEC. Developed a reactor for MBE deposition of high temperature superconductors. Initiated the first pulsed laser deposition effort of the high Tc materials at the University of Houston.

MEMBERSHIP in PROFESSIONEL and HONOR SOCIETIES

AVS, IEEE, Sigma Xi

PROFESSIONEL ACTIVITIES

Member of the Editorial Board of the " Microelectronics Journal"

Member of the Advisory board of the "Algerian Journal of Advanced Materials"

Patents:

1: Tandem Solar Cell with Improved Tunnel Junction (patent # 5,407,491)

2: Strained quantum well photovoltaic energy conventional (patent # 5,851,310)

3: Tandem solar cell with indium phosphide tunnel junction (patent # 5,800,630)

4: A microelectromechanical machined array valve (5,927,325)

5: Real Time Etch Rate Determination and Enhanced Etch End Point Detection Using Isotopically Engineered Materials (6,054,333).

Students’ and Postdoctoral Supervision:

1992-2000 trained over 18 undergraduate students

1994 graduated two MS students (physics);

1996 graduated one Ph.D. student (physics)

1997 graduated one Ph.D. Student (physics);

1998 graduated one Ph.D. and one M.S. Students (Chemistry Department)

Currently: Two Ph.D. Students (Chemistry department)

Advised a total of 8 post doctoral fellows,

FUNDING:

1993

The State of Texas Advanced Research Program; Low Energy Neutral Beam Etching of III-V compounds", $ 245,000 (01/1994-01/1996).

Industry funding, Ionwerks, Inc.; " Ion beam scattering experiments on III-N thin films"; $73,000

(06/1993-12/1993).

1994

Office of Naval Research equipment grant, " Development of a Low Energy Neutral Beam Source"; $ 145,000 (01/1994-12/1994).

Industry funding, Ionwerks, Inc.; "Time of Flight Ion Scattering for Real time monitoring of III-V compounds growth"; $ 47,000 (04/114-11/1994).

1997

Civilian Research Development Funds; "BN and CN thin Films for Field Emission Applications"; $39,000 (01/1997-01/1998).

Industrial funding; Ionwerks, Inc.; " Time of Flight Ion Scattering of III-N Compounds"; $ 94,000 (01/1997-12/1997).

Energy Laboratory at the University of Houston; " UV-Blue Emitters for Chemical Sensing Applications"; $ 16,000 (04/1997-10/1997).

1998

State of Texas Advanced Technology Program; " Real Time Surface Composition Monitoring of Thin Films Using Ion Scattering Techniques"; $ 270,000 (01/1998-01/2000).

Civilian Research Development Funds; " Laser Modification of CN/BN thin Films for Electron Field Emission Applications"; $ 12,000 (01/1998-12/1998).

Industrial support, Ionwerks, Inc.; " A Miniature Time of Flight Mass Spectrometer for Process Control and Monitoring of Thin Film Processes"; $ 170,000 (01/1998-08/1999).

Energy laboratory at the university of Houston; " A neural network controller for thin film process control optimization"; $ 5,500 (05/1998-08/1998).

1999

Environmental Institute of Houston; "GaN-based Chemical Sensors"; $ 12,000 (6 months; 01/99-08/99)

Ballistic Missile Defense Organization, Phase I STTR contract; "Development of BN-based multi layer capacitors for high power and high frequency applications"; $ 34,000 (6 months; 04/99-10/99)

Industrial Support (Ionwerks, Houston Texas); Testing of a Time of flight mass spectrometer in an RIE environment; $ 65,000 (1 year, 10/98-10/99)

Institute for Space Systems Operations; Post Doctoral support for two years

"Miniature Optical Sensor for Detection of Water and Air Contamination"

$ 40,000.00 (2 years; 01/2000-12/2001)

Department of Energy SBIR; "BN/CuLi Particle detectors"; $34,000 for 6 months ( 09/1999-02/2000).

Texas Space Grant Consortium; "Chemical Sensors for environmental control of enclosed Space platforms", $ 50 K for one year (09/1999-09/2000).

2000

Texas Space Grant Consortium; Continuation of "Chemical Sensors for environmental control of enclosed Space platforms", $ 50 K for one year (09/2000-09/2001).

Institute for Space Systems Operations; "Miniature Optical Sensor for Detection of Water and Air Contamination"; $ 13,000.00 ( 06/2000-09/2000).

National Institute of Health; " AlGaN particle detectors for bio mass spectrometry applications"; $36,000 (04/2000-09/2000).

DURIP-Army Research Office; "Time of Flight Mass Spectroscopy of Recoiled Ions for Real-time III-N Thin films Monitoring", $ 165 K (05/2000-05/2001).

Pending Proposals

National Science Fundation Goali program; " AlGaN Particle Detectors for Low Energy/High Mass Applications"; $ 650K (01/2001-12/2003)

Book Chapters:

Invited to write a book chapter in nitride materials research for the "handbook of Advanced Electronic and Photonic Materials" by Academic Press. The title is: "Synthesis of Nitride Materials for Tribilogical, High Temperature and Opto-Electronic Devices" (due June 1999).

Invited talks (1996-1999)

" In-Situ Monitoring and Control of III-Nitrides Thin Films Surface Composition by Time of Flight Low Energy Ion Scattering", A. Bensaoula, E. Kim, I. Berishev; MRS Spring Meeting 1999.

"Investigation of BN, CN, and BCN Thin Films for Tribology, Electronic, and Optical Applications"; A. Bensaoula et al;; Second International Conference on Advanced Materials; Sidi Bel Abbes, Algeria (1997).

"The Growth of Semiconductor Thin Films Using The Ultra high Vacuum of Space", Second International Conference in In-Situ Thin Film Monitoring" San Luis Potosis, Mexico 1996.

Selected Reviewed Publications (out of 98 reviewed publications total)

"Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1"; A. H.Bensaoula, I. Ruzakova, and A. Bensaoula, Microelectronics Journal 31(2000) 311-322.

"Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2"; A. H.Bensaoula, I. Ruzakova, and A. Bensaoula, Microelectronics Journal 31(2000) 323-331.

"In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions"; E. Kim, I. Berishev, and A. Bensaoula; and J. A. Schultz J. Vac. Sci. Technol.B;Vol.17 (3), pp. 1209-1213 (1999).

"Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas"; A. Tempez, N. Medelci, N. Badi, I. Berishev, D. Starikov, and A. Bensaoula; J. Vac. Sci. Technol. A; Vol.17 (4), pp. 2209-2213 (1999).

"Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films"; I. Berishev, E. Kim, A. Fartassi, M. Sayhi, and A. Bensaoula; J. Vac. Sci. Technol. A, Vol. 17 (4), pp. 2166-2169 (1999).

"Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications"; D. Starikov, N. Badi, I. Berishev, N. Medelci, O. Kameli, M. Sayhi, V. Zomorrodian, and A. Bensaoula; J. Vac. Sci. Technol. A, Vol.17(4), pp. 1235-1238 (1999).

"Field emission from as-grown and surface modified BN and CN thin films"; N. Badi, A. Tempez, D. Starikov, and A. Bensaoula; and V. P. Ageev, A. Karabutov, M. V. Ugarov, V. Frolov, and E. Loubnin; and K. Waters and A. Shultz; J. Vac. Sci. Technol A, Vol.17(4),pp. 1191-1195 (1999).

"Laser-induced modification of electron field emission from nanocrystalline diamond films"; M. V. Ugarov, V. P. Ageev, A. V. Karabutov, E. N. Loubnin, S. M. Pimenov, and V. I. Konov; and A. Bensaoula; J. Applied Physics, Vol.85(12), pp. 8436-8440 (1999).

"Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Surface Kinetic and Growth Peculiarities during Gas Source Molecular Beam Epitaxy of GaN"; E. Kim, I. Berishev, A. Bensaoula,. J.of Appl. Physics., Vol. 85, No.2, 1178-1185 (1999).

"UV laser induced interfacial synthesis of CN-BCN layers on diamond films in borazine and ammonia"; M. V. Ugarov, V. P. Ageev, A. V. Karabutov, E. N. Loubnin, S. M. Pimenov, V. I. Konov, and A. Bensaoula; Applied Surface Science, 138-139, 359-363 (1999).

"Enhanced free carrier generation in boron nitride films by pulsed laser radiation"; V. Ageev, S. Klimentov, M. Ugarov, E. Loubnin, A. Bensaoula, N. Badi, A.Tempez, and D.Starikov; Applied Surface Science, 138-139, 364-369 (1999).

"The Use of Multilayer Neural Networks in Material Synthesis"; Abdelhak Bensaoula, Heidar A. Malki, and A. Marcellino Kwari; IEEE Transac. Semi. Manufac., Vol. 11, p. 421, No. 3, August 1998.

"Field emission properties of GaN films on Si(111)"; I.Berishev, A.Bensaoula, I.Rusakova, V.Ageev, M.Ugarov, A. Karabutov; Appl.Phys. Lett. Volume 73, Issue 13, pp. 1808-1810(1998).

"High Growth Rate GaN Films Using a Modified Electron Cyclotron Resonance Plasma Source",

I.Berishev, E.Kim, A.Bensaoula, J. Vac. Sci. Technoll. A, Vol. 16 (5), pp. 2791-2793 (1998).

"Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods", E. Kim, I. Berishev, and A. Bensaoula, MRS Internet J. Nitride Semicond. Res. 3, 22 (1998).

"Surface composition of BN, CN, and BCN thin films"; A. Tempez, N. Badi, J. Kulik, and A. Bensaoula, J. Vac. Sci.Technol. A 16, 2896 (1998)

"Surface Composition and Morphology of Chemical Beam Epitaxy Grown GaN thin Films"; Esther Kim, I.Berishev, A.Bensaoula, S.Lee, S.S.Perry, K.Waters, A.Shultz; J.Vac. Sci. Technol. B, 16(3), 1270(1998).

"Nucleation and Growth of Chemical Beam Epitaxy Gallium Nitride Thin Films"; Esther Kim, I.Berishev, A.Bensaoula, S.Lee, S.S.Perry, K.Waters, A.Shultz; Appl. Phys. Lett., 71(21), 3072(1997).

"Dynamical Charge and Force Constant Calculations in c-BN under Pressure", N. Badi, A. Bousetta, A. Bensaoula, and H. Aourag; Phys.Stat.Sol.(b) 198, 721 (1996).

"Electrical Properties of Boron Nitride Thin Films Grown by Neutralized Nitrogen ion Assisted Vapor Deposition"; Ming. Lu, A. Bousetta, and A. Bensaoula; Appl. Phys. Lett. 68 (5), p 622 (1996).

"Investigation of GaN deposition on Si, Al2O3, and GaAs using in Situ mass spectroscopy of recoiled ions and reflection high energy electron diffraction"; W.T. Tafferner, A. Bensaoula, E. Kim, and A. Bousetta; J. Vac. Sci. Technol. B 14(3), 1996.

"The Investigation of GaN growth on Silicon and sapphire using in-situ time of flight low energy ion scattering and RHEED"; W.T. Tafferner, A. Bensaoula, E. Kim, and A. Bousetta; J. Cryst. Growth 164, 167, 1996.

"The Nitridation of GaAs and GaN deposition on GaAs examined by in-situ time of flight ion scattering and RHEED"; A. Bensaoula, W. T. Tafferner, E. Kim, A. Bousetta, J. Cryst. Growth 164, 185, 1996.

"Formation of Carbon Nitride Films on Si(100) Substrates by Electron Cyclotron Resonance Plasma Assisted Vapor Deposition"; A. Bousetta, M. Lu, and A. Bensaoula, A. Schultz; Appl. Phys. Lett. 65(6), p 696-698 (1994).

"Physical Properties of Thin Carbon Nitride Films Deposited by Electron Cyclotron Resonance Assisted Vapor Deposition"; A. Bousetta, M. Lu, and A. Bensaoula; J. Vac. Sci. Technol. A13(3), p.1639-1643 (1995).

"Electrical Properties of Boron Nitride Thin Films Grown By Neutralized Nitrogen Ion Asssisted Vapor Deposition"; Ming Lu, A. Bousetta, and A. Bensaoula; Appl. Phys. Lett. 68 (5), p. 622-624, (1996).

" The Reaction of Ammonia on GaN Surfaces"; S. Gates, C..M. Chang, A. Bensaoula, and A. Schultz; Chem. Phys. Let., 246, 275 (1995).

"Surface effects during proximity rapid thermal diffusion of phosphorous in silicon", S. Montadon, W. Zagozdzon-Wosik, J. Li, W. T. Taferner, and A. Bensaoula in "Cleaning Technology in Semiconductor Device Manufacturing IV", edited by J. Ruzyllo and E. Nowak, Proc. of the 4^th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing IV, The Electrochem. Soc. Inc., Pennigton, NJ, pp. 552-559, Vol 95-20 (1995).

"The growth of cubic boron nitride on Si(100) by neutralized ion beam bombardment" M.Lu, A.Bousetta, R.Sukach, A.Bensaoula, K.Walters, and A.Schultz , Appl.Phys.Lett.64, 151, 1994; "ECR plasma assisted growth of thin carbon nitride films on Si(100)" A. Bousetta, A. Bensaoula, M. Lu, and J. A. Schultz, Appl. Phys. Lett, 65 (1994)

"Effects of ion beam and electron cyclotron resonance etch-induced damage on the optical properties of multi quantum well structures", A.H. Bensaoula, A. Bensaoula, and A. Freundlich, J. Appl. Phys. 75, 2818 (1994).

"In-Situ Doping and Composition Monitoring for Molecular Beam Epitaxy Using Mass Spectroscopy of Recoiled Ions", K. Waters, A. Bensaoula, A. Schultz, K. Eipers-Smith, and A. Freundlich, J. Crys. Growth 127 (1993) 972-975.

"Interface and relaxation properties of chemical beam epitaxy grown GaP/GaAs structures",

A. Freundlich, A. Bensaoula, A. H. Bensaoula, and V. Rossignol, J. Vac. Sci. Technol. B 11(3), 851 (1993).

"Chemical Beam Epitaxy and Structural Analysis of InAs/InP Strained Single and Multi Quantum Well Heterostructures", A. Bensaoula, A. Freundlich, A.H. Bensaoula, J. Vac. Sci. Technol. B 11(3), 851 (1993)

"Low Temperature Organometallic Gas Introduction System for Chemical Beam Epitaxy Under Micro-Gravity Conditions", M. Zaltsberg, A. Bensaoula, C. Horton, R. Haacke, A. Freundlich, P. Mahavadi, and V. Rossignol, J. Vac. Sci. Technol. A, 11.4, 1993, 1602-06.

"Chemical Beam epitaxy and Structural Analysis of InAs/InP Strained Single and Multi Quantum Well Heterostructures", A. Freundlich, A.H. Bensaoula, and A. Bensaoula, J. Crys. Growth, 127, 246 (1993).

"The temperature dependent variation of bulk and surface composition of InxGa1-xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS", H.S.Hansen, A.Bensaoula, S. Tougaard, J. Crys Growth 116 (1992) 271-282.

"Anisotropy in InGaAs/GaAs Heterostructures Grown by Low-Pressure MOVPE and CBE", A.P.Roth, D. Morris, Q. Sun, C. Lacelle, Z. Wasilewski, P. Maigne, and A. Bensaoula, J. Cryst. Growth 120 (1992): 212-17.

"A Study of Y-BA-Cu-O/Si Interfaces by X-ray Photoelectron Spectroscopy", A.R. Chourasia and D.R.Chopra; A.H. Bensaoula, A. Bensaoula, and P. Ruzakowski, J. Vac. Sci. Technol., A10, 115 (1992).

"Rate Equation Models of Epitaxial Growth on Stepped Surfaces", J.Resh, J. Strozier, A. Bensaoula, A. Ignatiev, J. Vac. Sci. Technol., A9(3) (1991).

"Interesting Aspects of RHEED Oscillations During MBE Growth of GaAs (100)", K.D.Jamison, J.S.Resh, C.C.Horton, A. Bensaoula, and A. Ignatiev, J.Vac.Sci.Tech., B8(2), p.279, 1990.

"A RHEED and XPS Study of InGaAs on GaAs Grown by CBE; A. Bensaoula, H. Hansen, H. C. Chen, J. Zborowski, K. Jamison, A. Ignatiev and H.D. Shih, J. Crystal Growth 105, 227 (1990).

CONFERENCE PRESENTATIONS SINCE OCTOBER 1997

1. In-Situ Monitoring and Control of III-Nitrides Thin Films Surface Composition by Time of Flight Low Energy Ion Scattering; A. Bensaoula, E. Kim, I. Berishev; Material Research Society Spring Meeting, April 5-9 1999, San Francisco, CA.

2. Photoenhanced Reactive Ion Etching of III-V Nitrides in BCl₃/Cl₂/Ar/N₂; N. Medelci, A. Tempez., D. Starikov, N. Badi, I. Berishev, and A. Bensaoula; Material Research Society Spring Meeting, April 5-9 1999, San Francisco, CA.
3. "Boron nitride materials for tribological and high temperature high power devices"; Badi. N, Tempez. A, Kulik. J, Starikov. D, Medelci. N, Klimentov. S. M, Garnov. S.V, Ageev. V.P, Ugarov. M.V, Waters. K, Schultz. A, and Bensaoula. A; 1998 Material Research Society Fall Meeting, December 1-5, 1997, Boston, MA.
4. Time of Flight Mass Spectroscopy of Recoiled Ions – A Comparative Studies of GaN Thin Film Deposition by Various MBE Methods, Esther Kim, I. Berishev, A. Bensaoula, J. A. Schultz, and K. Waters, 45^th National Symposium of American Vacuum Society, Baltimore, MD, November 2-6, 1998.
5. , "Photoenhanced RIE of III-V Nitrides in BCl3/Cl2/Ar/N2 Plasmas"; Tempez. A, Medelci. N, Badi. N, Berichev. I, Starikov. D, Bensaoula. A45^th AVS Int. Symp., November 2-6, 1998, Baltimore, MD.
6. "MIS Schottky Barrier Structures Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Optoelectronic Device Applications"; Starikov. D, Badi. N, Berichev. I, Medelci. N, Kameli. O, Sayhi. M, Zomorrodian. V, and Bensaoula. A; 45^th AVS Int. Symp., November 2-6, 1998, Baltimore, MD.
7. Field Emission from as-grown and Surface Modified BN and CN Thin Films; Badi. N, Tempez. A, Starikov. D, Bensaoula. A, Ageev.V.P, Karabutov. A. V, Ugarov. M.V, Frolov. V, Loubnin. E, Waters. K and Schultz. A; 45th National Symposium of the American Vacuum Society, Baltimore, Nov 1998.
8. Mg Doping Studies of Electron Cyclotron Resonance Molecular Beam Epitaxy of GaN Thin Films; I. Berishev⁾, E. Kim, A. Fartasi, M. Sayhi and A. Bensaoula; 45th National Symposium of the American Vacuum Society, Baltimore, Nov 1998.
9. In Situ Characterization of GaN and InGaN Thin Films by Time of Flight Mass Spectroscopy of Recoiled Ions; E. Kim, I. Berishev, A. Bensaoula; and A. Schultz; 17^th annual North American Conference on Molecular Beam Epitaxy, College State, Pensylvania, October 1998.
10. UV laser interfacial synthesis of CN-BCN layers on diamond films in borazine and ammonia; Ugarov. M, Ageev. V, Karabutov. A, Loubnin. E, Pimenov. S, Konov. V, and Bensaoula. A; European-Material Research Society Spring Meeting, Symposium G; June 16-19, 1998, Strasbourg, France
11. Laser-driven plasma CVD of CN/BN compound films; Ageev. V, Ugarov. M, Loubnin. E, Konov. V, and Bensaoula. A, Badi. N, Tempez. A, and Starikov. D; European-Material Research Society Spring Meeting, Symposium G; June 16-19, 1998, Strasbourg, France
12. Non-linear laser transient photoconductivity in boron nitride films; Klimentov. S, Ageev. V, Loubnin. E, Ugarov. M, Garnov. S, Bensaoula. A, Badi. N, Tempez. A, and Starikov. D; European-Material Research Society Spring Meeting, Symposium G; June 16-19, 1998, Strasbourg, France
13. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods, Esther Kim, I. Berishev, A. Bensaoula, J. A. Schultz, K. Waters, and W. Zagozdzon-Wosik, The 3^rd European Gallium Nitride Workshop, Warsaw, Poland, June 22-24, 1998.
14. "Reactive Ion Etching of BN and GaN using Cl2/Ar and BCl3/Cl2/Ar plasmas", N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, A. Bensaoula, A. Chourasia, and W. Zagozdzon-Wosik; Nitride Workshop. June 23, 1998, Warsaw, Poland.
15. "Boron Nitride Insulating Interfacial Layers for High Temperature Diodes Based on Wide Band Gap Semiconductors"; D. Starikov, N. Badi, I. Berichev, N. Medelci, A. Tempez, V. Zomorrodian, A. Shultz, and A. Bensaoula; 4^th International High Temperature Electronic Conference, Albuquerque, New Mexico, June 14, 1998
16. "Reactive Ion Etching of BN and GaN using Cl2/Ar and BCl3/Cl2/Ar plasmas", N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev and A. Bensaoula A. Chourasia, Texas Surface Science Round up, May 27, 1998, Round Top, TX.
17. "Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl₂ and BCl₃/Cl₂/Ar hemistries"; Medelci. N, Tempez. A, Kim. E, Badi. N, Starikov. D, Berichev. I, and Bensaoula. A; 1998 Material Research Society Spring Meeting, April 13-17, 1998, San Francisco, CA.
18. A. Tempez, N. Badi , D. Starikov and A. Bensaoula; Poster Presentation at the Sigma Xi Research Day, University of Houston Chapter, April 1998.
19. Nitride Materials for Tribological and Electronic Applications; A. Tempez, N. Badi, D. Starikov, and A. Bensaoula; " Nitride Materials for Tribological and Electronic Applications" Poster Presentation at the Sigma Xi Research Day, University of Houston Chapter, April 1998.
20. " Nitride Materials for Tribological and Electronic Applications", A. Tempez, N. Badi, D. Starikov, and A. Bensaoula; Poster Presentation at the Natural Sciences and mathematics Alumni Student Challenge, University of Houston, February 1998.

21."Employment of Boron Nitride Insulating Layers for High Temperature Diode Structures Based

1. Tempez, V. Zomorrodian, and A. Bensaoula, High Temperature Electronic Materials and

22. "Boron carbon nitride materials for tribological and high temperature device applications"; Badi. N, Tempez. A, Starikov. D, Zomorrodian. V, Medelci. N, Bensaoula. A, Kulik. J, Lee. S, Perry. S.S, Ageev. V.P, Garnov. S.V, Ugarov. M.V, Klimentov. S.M, Tokarev. V.N, Waters. K, and Schultz. A; Space Technology and Applications International Forum, January 1998, Albuquerque, NM.
23. A hot electrons-based wide spectrum on-orbit optical calibration source, D. Starikov, I. Berishev, N. Medelci, Esther Kim, Y. Wang, A. Bensaoula, Space Technology & Applications International Forum (STAIF-98), Albuquerque, NM, January 1998.
24. Nitride Materials for Tribological and Electronic Applications", A. Tempez; Oral Presentation at the 16^th Semiannual Texas Center Superconductivity University of Houston Student Symposium, Dec 1997.
25. "Chemical Beam Epitaxy of Cubic GaN Thin Films on (001) GaAs; E.Kim, I.Rusakova, I.Berishev, A.Bensaoula; MRS Fall meeting, 1997.
26. In-situ characterization of InGaN grown by GSMBE and plasma assisted MBE. Esther Kim,
    I. Berishev, A. Bensaoula, K. Waters, and J. A. Schultz, Waters, MRS fall meeting, Boston, MA, December 1–5, 1997.
27. In-situ surface composition and structural analysis of cubic GaN thin films grown on (001) GaAs. Esther Kim, I. E. Berishev, A. Bensaoula, and I. Rusakova, MRS fall meeting, Boston, MA, December 1–5, 1997.
28. "Synthesis and Characterization of BN Thin Films by Laser Transient Photoconductivity (PC)"; Badi. N, Tempez. A, Kulik. J, Starikov. D, Medelci. N, Klimentov. S.M; Garnov. S.V, Ageev. V.P, Ugarov. M.V, and Bensaoula. A; Material Research Society Fall Meeting, December 1-5, 1997, Boston, MA.
29. Surface composition and morphology of chemical beam epitaxy grown GaN thin films. Esther Kim, I. Berishev, A. Bensaoula, S. Lee, S. S. Perry, K. Waters, and J. A. Schultz, 16^th annual North American Conference on Molecular Beam Epitaxy, Ann Arbor, MI, October 5–8, 1997.
30. Nucleation and growth of GaN thin films deposited by chemical beam epitaxy. Esther Kim,
    I. Berishev, A. Bensaoula, J. A. Schultz, K. Waters, S. Lee, and S. S. Perry, 44^th National Symposium of American Vacuum Society, San Jose, CA, October 20–24, 1997. (Morton Traum Award Finalist in Surface Science Division).
31. Application of in-situ mass spectroscopy of recoiled ions for MBE grown GaN thin Films. Esther Kim, I. Berishev, A. Bensaoula, and J. A. Schultz, 44^th National Symposium of American Vacuum Society, San Jose, CA, October 20–24, 1997.
32. Synthesis and Characterization of BN and BCN thin films; Tempez. A, Badi. N, Bensaoula. A, Kulik. J, Ageev. V.P, Klimentov. S and Garnov. S, Lee. S and Perry. S.S; 44^th National Symposium of the American Vacuum Society, San Jose, Oct 1997.