:: Nasr Medelci, Ph.D. ::

.:: CLICK TO SEE A LARGER PHOTO ::.

ADDRESS: #724, S&R1, SVEC, University of Houston
                   Houston, Texas, 77204-5507
Tel: (713) 743-3621
Fax: (713) 747-7724
E-mail: nmedelci@ieee.org

EDUCATION :

  • Ph.D. 1996 University of Houston, Electrical Engineering
  • M.S. 1981 University of Missouri-Rolla, Electrical Engineering
  • Licence (B.S.) 1978 University of Oran, Physics

PROFESSIONAL EXPERIENCE :

  • 1999-Present Research Scientist. SVEC, University of Houston
  • 1997-1999 Research Associate, SVEC, University of Houston
  • 1991-1996 Research Assistant, SVEC, University of Houston.

RESEARCH ACHIEVEMENTS SUMMARY :

1997-PRESENT : Materials and Devices Processing Task Leader, Nitride Materials and Devices Laboratory :

  1. Demonstrated nitride based junction devices operating at above 600 C
  2. Demonstrated pre-breakdown luminescence devices using BN/GaN
  3. Demonstrated RIE and photo-enhanced RIE of BN and III-Nitride materials
  4. Demonstrated gated field emission devices.

1991-1996 : Photovoltaic Project :

  1. Demonstrated high efficiency InP and InGaAs-based single junction, quantum well, and tandem solar cells.
  2. Demonstrated high performance InP and InGaAs tunnel junctions.

PATENT :
"Tandem solar cell with indium phosphide tunnel junction", Patent Number 5,800,630.

AFFILIATION :
Institute of Electronics and Electrical Engineers (IEEE).

SELECTED PUBLICATIONS (out of 23 publications) :

  • Medelci. N, Tempez. A, Starikov D, Badi N, Berishev I, and Bensaoula A; "Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas"; Journal of ELECTRONIC MATERIALS 29(9), 1079-1083 (2000).
  • E. Kim, A. Tempez., N. Medelci, I. Berichev, and A. Bensaoula, "Selective Area Growth of GaN on Si(111) by Chemical Beam Epitaxy "; J. Vac. Soc. Technol. A 18(4), 1130-1134 (2000).
  • Medelci. N, Tempez. A, Starikov. D, Berishev. I, and Bensaoula. A; "Photoassisted RIE of GaN in BCl3/Cl2/N2"; Mat. Res. Soc. Symp. Proc. 572, 535-540 (1999).
  • Tempez. A, Medelci. N, Badi. N, Berichev. I, Starikov. D, Bensaoula. A, "Photoenhanced RIE of III-V Nitrides in BCl3/Cl2/Ar/N2 Plasmas"; J. Vac. Soc. Technol. A 17(4), 2209 (1999).
  • Medelci. N, Tempez. A, Kim. E, Badi. N, Starikov. D, Berichev. I, and Bensaoula. A; "Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl2 and BCl3/Cl2/Ar Chemistries"; Mat. Res. Soc. Symp. Proc. 512, 285 (1998).
  • M. F. Vilela, N. Medelci, A. Bensaoula, A. Freundlich and P. Renaud, "First epitaxial InP tunnel junctions grown by Chemical Beam Epitaxy", J. Crys. Growth 164, 465-469 (1996).

SELECTED PRESENTATIONS (out of 27 presentations) :

  • N. Medelci, A. Tempez., I. Berishev, E. Kim, A. Bensaoula, M. Gonin, K. Fuhrer, and A. Schultz; "Photo-Assisted RIE of III-V Materials in BCl3/Cl2/Ar/N2"; 46th AVS Int. Symp., October 25-29, 1999, Seattle, WA.
  • N. Medelci, A. Tempez., D. Starikov, N. Badi, I. Berishev, and A. Bensaoula; "Photoenhanced Reactive Ion Etching of III-V Nitrides in BCl3/Cl2/Ar/N2"; 1999 Materials Research Society Spring Meeting, April 5-9, 1999, San Francisco, CA.
  • Tempez. A, Medelci. N, Badi. N, Berichev. I, Starikov. D, Bensaoula. A, "Photoenhanced RIE of III-V Nitrides in BCl3/Cl2/Ar/N2 Plasmas"; 45th AVS Int. Symp., November 2-6, 1998, Baltimore, MD.
  • Medelci. N, Tempez. A, Kim. E, Badi. N, Starikov. D, Berichev. I, and Bensaoula. A; "Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl2 and BCl3/Cl2/Ar Chemistries"; 1998 Materials Research Society Spring Meeting, April 13-17, 1998, San Francisco, CA.
  • N. Medelci, A. Tempez, E. Kim, N. Badi, D. Starikov, I. Berichev, A. Bensaoula, A. Chourasia, and W. Zagozdzon-Wosik, "Reactive Ion Etching of BN and GaN using Cl2/Ar and BCl3/Cl2/Ar plasmas", Nitride Workshop. June 23, 1998, Warsaw, Poland.
  • N. Medelci, A. Freundlich, A. Bensaoula and M. F. Vilela, "High performance InP lattice-matched In0.53Ga0.47As tunnel junctions fabricated on Si substrates", International Conf. on Semiconductor Heteroepitaxy: Growth, Characterization and Device Applications, July 1995, Montpellier, France.
  • P. Renaud, M. F. Vilela, A. Freundlich, A. Bensaoula, and N. Medelci, "Modeling of p-i(Multi-Quantum Well)-n Solar Cell. A Contribution for a Near Optimum Design", 24th IEEE-PVSC, December 1994.
  • N. Medelci, A. Bensaoula, M. F. Vilela and A. Freundlich, "Chemical Beam Epitaxy grown indium gallium arsenide tunnel junctions", 1993 M.R.S. Spring Meeting, April 1993, San Francisco, CA.

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