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  David Starikov, Ph. D.

dstarikov@space.svec.uh.edu

Education:

State University of Chernovtsy, Ukraine M.S. 1976 Physics

State University of Chernovtsy, Ukraine Ph.D. 1991 Physics

Research activities and interests:

  • Development of advanced integrated micro sensors based on wide band gap materials for environmental, space, military, industrial, and biomedical applications
  • Investigation of high temperature, optoelectronic, and field emission properties of III-V Nitrides for microelectronics sensor applications
  • Development of III-V Nitride materials and devices for high temperature applications
  • Development of Multi Quantum Well (MQW) solar sells based on III-V semiconductors for space applications.
  • Development of novel laser-based deposition techniques for diamond and c-BN for flat panel field emission displays. As a PI completed SBIR Phase II project investigating supersonic beam deposition of diamond and Phase I project developing wide spectrum high performance sensor calibrators.
  • Development of surface-barrier light emitting diodes based on silicon, gallium phosphide and silicon carbide, running in the pre-breakdown electroluminescent mode.

Work experience:

1998-present Space Vacuum Epitaxy Center at University of Houston. Senior Research Scientist.
1997-1998 Space Vacuum Epitaxy Center at University of Houston. Research Scientist.
1996-1997 International Stellar Technologies, Inc. Research Scientist.
1993-1996 SI Diamond Technology, Inc., Staff Scientist
1988-1992 State University of Chernovtsy (Ukraine). Sector Manager, Project Leader.

Selected recent publications:  

  • N. Badi, A. Tempez, D. Starikov, V. Zomorrodian, J. Kulik, V. P. Ageev, S. Klimentov, S. Garnov, S. Lee, S. Perry , and A. Bensaoula. Investigation of BN, CN, and BCN Thin Films for Tribology, Electronic, and Optical Applications. Algerian Journal of Advanced Materials (1999).
  • N. Badi, A. Tempez, D. Starikov, A. Bensaoula, V. P. Ageev, A. Karabutov, M. Ugarov, V. Frolov, E. Loubnin, K. Waters and A. Schultz. Field Emission from as-grown and Surface Modified BN and CN Thin Films.  Journal Vacuum Science and Technology A (1999).
  • A. Tempez, N. Medelci, N. Bad, I. Berichev, D. Starikov, A. Bensaoula. Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl2/Ar/N2 plasmas; to be published in the Journal Vacuum Science and Technology A (1999).
  • D. Starikov, N. Badi, I. Berichev, N. Medelci, O. Kameli,M.  Sayhi, V. Zomorrodian, and A. Bensaoula. MIS Schottky Barrier Structures Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Optoelectronic Device Applications. Journal Vacuum Science and Technology A (1999).
  • N. Medelci, A Tempez, D. Starikov, N. Badi, I Berishev, and A. Bensaoula. Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas. J. Elec. Mat. , September, 2000.

[click here to see a complete resume]