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David Starikov, Ph. D.
dstarikov@space.svec.uh.edu
Education:
State University of Chernovtsy, Ukraine M.S. 1976 Physics
State University of Chernovtsy, Ukraine Ph.D. 1991 Physics
Research activities and interests:
- Development of advanced integrated micro sensors based on wide band
gap materials for environmental, space, military, industrial, and
biomedical applications
- Investigation of high temperature, optoelectronic, and field emission
properties of III-V Nitrides for microelectronics sensor applications
- Development of III-V Nitride materials and devices for high temperature
applications
- Development of Multi Quantum Well (MQW) solar sells based on III-V
semiconductors for space applications.
- Development of novel laser-based deposition techniques for diamond
and c-BN for flat panel field emission displays. As a PI completed
SBIR Phase II project investigating supersonic beam deposition of
diamond and Phase I project developing wide spectrum high performance
sensor calibrators.
- Development of surface-barrier light emitting diodes based on silicon,
gallium phosphide and silicon carbide, running in the pre-breakdown
electroluminescent mode.
Work experience:
1998-present Space Vacuum Epitaxy Center at University of Houston.
Senior Research Scientist.
1997-1998 Space Vacuum Epitaxy Center at University of Houston.
Research Scientist.
1996-1997 International Stellar Technologies, Inc. Research Scientist.
1993-1996 SI Diamond Technology, Inc., Staff Scientist
1988-1992 State University of Chernovtsy (Ukraine). Sector Manager,
Project Leader.
Selected recent publications:
- N. Badi, A. Tempez, D. Starikov, V. Zomorrodian, J.
Kulik, V. P. Ageev, S. Klimentov, S. Garnov, S. Lee, S. Perry , and
A. Bensaoula. Investigation of BN, CN, and BCN Thin Films for Tribology,
Electronic, and Optical Applications. Algerian Journal of Advanced
Materials (1999).
- N. Badi, A. Tempez, D. Starikov, A. Bensaoula, V. P. Ageev,
A. Karabutov, M. Ugarov, V. Frolov, E. Loubnin, K. Waters and A. Schultz.
Field Emission from as-grown and Surface Modified BN and CN Thin Films.
Journal Vacuum Science and Technology A (1999).
- A. Tempez, N. Medelci, N. Bad, I. Berichev, D. Starikov,
A. Bensaoula. Photoenhanced reactive ion etching of III-V nitrides
in BCl3/Cl2/Ar/N2 plasmas; to be
published in the Journal Vacuum Science and Technology A (1999).
- D. Starikov, N. Badi, I. Berichev, N. Medelci, O. Kameli,M.
Sayhi, V. Zomorrodian, and A. Bensaoula. MIS Schottky Barrier Structures
Fabricated Using Interfacial BN Layers Grown on GaN and SiC for Optoelectronic
Device Applications. Journal Vacuum Science and Technology A (1999).
- N. Medelci, A Tempez, D. Starikov, N. Badi, I Berishev,
and A. Bensaoula. Etch Characteristics of GaN and BN Materials in
Chlorine-Based Plasmas. J. Elec. Mat. , September, 2000.
[click here to see a complete
resume]
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