
::Chris Boney ::
cboney@uh.edu
Work History
03/00 Present: ISSO Post-Doctoral Fellow,
Space Vacuum Epitaxy Center, University of Houston
- Current research interests include growth of
optoelectronic GaN-based devices by RFMBE on
sapphire and silicon substrates. One of the goals
of the research includes demonstration of an
integrated III-N detector for water and/or air
contaminants .
01/99 03/00: Post-Doctoral Researcher,
Dept. of Physics, North Carolina State University
- Demonstrated the first GaN/AlGaN p-i-n photodiode
visible-blind UV camera (32x32 array).
- Worked to demonstrate a solar-blind (AlGaN/AlGaN)
UV camera.
06/93 12/98: Graduate Research Assistant,
Dept. of Physics, North Carolina State University
- Developed growth process of GaN, AlN, and AlGaN
by Sublimation Vapor Phase Epitaxy (SVPE).
- Characterized semiconductor materials through
double crystal x-ray diffraction, scanning
electron microscopy, photoluminescence,
cathodoluminescence, Hall effect measurement, and
capacitance-voltage profiling.
- Researched the growth of ZnSe and related
compounds by Molecular Beam Epitaxy (MBE) for
optoelectronic applications.
01/91 05/93: Undergraduate Research
Assistant, Dept. of Physics, North Carolina State
University
- Fabricated semiconductor devices employing
standard processing techniques: photolithography,
mask design, metal deposition, and chemical
etching.
Technical Skills
- Five years experience in semiconductor film
growth and characterization, including III-V and
II-VI materials by Molecular Beam Epitaxy (MBE)
and Vapor Phase Epitaxy (VPE).
- Four years experience in semiconductor device
fabrication: mask design, photolithography,
contact evaporation, and etching.
- Hands-on experience with UHV and HV vacuum
technology, including modification, integration,
and maintenance of MBE and VPE systems.
Education
Ph.D. in Solid State Physics, minor in Electrical
Engineering, North Carolina State University, May 1999.
B.S. in Physics, minor in Mathematics, North Carolina
State University, 1993.
Selected Publications
- "UV-Specific (320-365 nm) Digital Camera
Based On a 128x128 Focal Plane Array of GaN/AlGaN
p-i-n Photodiodes", J.D. Brown, J. Boney, J.
Matthews, P. Srinivasan, J.F. Schetzina, Thomas
Nohava, Wei Yang, and Subash Krishnankutty, MRS
Internet J. Nitride Semicond. Res. 5, 6 (2000).
- "High Sensitivity Visible-Blind AlGaN
Heterostructure Photodiodes", J.D. Brown,
Zhonghai Yu, C. Boney, J.W. Cook, Jr., and J.F.
Schetzina, presented at the Fall MRS, Boston MA,
Nov. 29 Dec. 3 1999.
- "Visible-Blind UV Digital Camera Based on a
32 x 32 Array of GaN/AlGaN p-i-n Photodiodes",
J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney,
J. Boney, J.F. Schetzina, J.D. Benson, K.W. Lang,
C. Terrill, Thomas Nohava, Wei Yang, Subash
Krishnankutty, MRS Internet J. Nitride Semicond.
Res. 4, 9 (1999).
- "MBE Growth of III-V Nitride Films and
Quantum Wells Structures Using Multiple RF Plasma
Sources", M.A.L. Johnson, Zhonghai Yu, C.
Boney, W.H. Rowland, Jr., W.C. Hughes, J.W. Cook,
Jr., J.F. Schetzina, N.A. El-Masry, M.T. Leonard,
H.S. Kong, and J.A. Edmond, Mat. Res. Soc. Symp.
Proc. 449, 271 (1997).
[click here to see a complete
resume]
|