Chris Boney
Work History
03/00 – Present: ISSO Post-Doctoral Fellow, Space Vacuum Epitaxy Center, University of Houston
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Current research interests include growth of optoelectronic GaN-based devices by RFMBE on sapphire and silicon substrates. One of the goals of the research includes demonstration of an integrated III-N detector for water and/or air contaminants .01/99 – 03/00: Post-Doctoral Researcher, Dept. of Physics, North Carolina State University
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Demonstrated the first GaN/AlGaN p-i-n photodiode visible-blind UV camera (32x32 array). Responsibilities included designing the device processing sequence, fabricating the diode arrays, and testing the finished devices.•
Worked to demonstrate a solar-blind (AlGaN/AlGaN) UV camera. This task involved a) researching the growth of high Al-composition AlGaN by Organometallic Vapor Phase Epitaxy (OMVPE), and b) studying the formation of ohmic contacts to p-AlGaN and n-AlGaN.06/93 – 12/98: Graduate Research Assistant under Professor J.F. Schetzina, Dept. of Physics, North Carolina State University
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Developed growth process of GaN, AlN, and AlGaN by Sublimation Vapor PhaseEpitaxy (SVPE). This technique uses gallium and aluminum compounds in an
MOVPE-style reactor to achieve high deposition rates necessary for the growth
of "quasi-bulk" III-Nitride substrates.
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Characterized semiconductor materials through double crystal x-ray diffraction,scanning electron microscopy, photoluminescence, cathodoluminescence, Hall
effect measurement, and capacitance-voltage profiling. Used the information
gathered to alter the material growth process leading to improvements in the structural,
optical, and electronic properties.
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Researched the growth of ZnSe and related compounds by Molecular Beam Epitaxy(MBE) for optoelectronic applications. Demonstrated the first ZnSe-based laser
diode grown homoepitaxially on ZnSe substrates.
01/91 – 05/93: Undergraduate Research Assistant under Professor J.F. Schetzina, Dept. of Physics, North Carolina State University
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Fabricated semiconductor devices employing standard processing techniques:photolithography, mask design, metal deposition, and chemical etching.
08/90 – 12/90: Undergraduate Teaching Assistant, Dept. of Physics, North Carolina State University
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Taught Introductory Physics Laboratory. Responsibilities included lecturing on lab material and grading lab reports.
Technical Skills
• Five years experience in semiconductor film growth and characterization, including III-V and II-VI materials by Molecular Beam Epitaxy (MBE) and Vapor Phase Epitaxy (VPE).
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Four years experience in semiconductor device fabrication: mask design, photolithography, contact evaporation, and etching.•
Hands-on experience with UHV and HV vacuum technology, including modification, integration, and maintenance of MBE and VPE systems.Education
Ph.D. in Solid State Physics, minor in Electrical Engineering, North Carolina State University, May 1999.
B.S. in Physics, minor in Mathematics, North Carolina State University, 1993.
Computer Skills
Languages: FORTRAN, Pascal
Platforms: Windows, Macintosh
Tools: L-Edit, Igor, Excel, Word, PowerPoint, AutoCAD
Academic Honors and Professional Activities
Graduate GPA 4.0/4.0, Undergraduate GPA 3.96/4.0
Recipient of the Phi Kappa Phi Outstanding Graduate Student Award, 1999.
Sigma Pi Sigma National Physics Honor Society
Member of the Materials Research Society.
Publications
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2. "High Sensitivity Visible-Blind AlGaN Heterostructure Photodiodes", J.D. Brown, Zhonghai Yu, C. Boney, J.W. Cook, Jr., and J.F. Schetzina, presented at the Fall MRS, Boston MA, Nov. 29 – Dec. 3 1999.
3. "High-Detectivity Visible-Blind GaN/AlGaN Heterostructure Photodiodes", C. Boney, J.D. Brown, Z. Yu, J.W. Cook, Jr., and J.F. Schetzina, presented at the Joint International Meeting of the Electrochemical Society, Honolulu HI, Oct. 17-22 1999.
4. "UV Detectors Based on GaN/AlGaN Photodiodes", J.D. Brown, C. Boney, Zhonghai Yu, M.A.L. Johnson, and J.F. Schetzina, presented at ICSCRAM, Research Triangle Park NC, 1999.
5. "Visible-Blind UV Digital Camera Based on a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes", J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J.F. Schetzina, J.D. Benson, K.W. Lang, C. Terrill, Thomas Nohava, Wei Yang, Subash Krishnankutty, MRS Internet J. Nitride Semicond. Res. 4, 9 (1999).
6. "MBE Growth of III-V Nitride Films and Quantum Wells Structures Using Multiple RF Plasma Sources", M.A.L. Johnson, Zhonghai Yu, C. Boney, W.H. Rowland, Jr., W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, N.A. El-Masry, M.T. Leonard, H.S. Kong, and J.A. Edmond, Mat. Res. Soc. Symp. Proc. 449, 271 (1997).
7. "Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates", M.A.L. Johnson, Z. Yu, C. Boney, W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, H. Zhao, B. Skromme, and J.A. Edmond, Mat. Res. Soc. Proc. 449, 215 (1997).
8. "Surface Preparation of ZnSe Substrates for MBE Growth of II-VI Light Emitters", W.C. Hughes, C. Boney, M.A.L. Johnson, J.W. Cook, Jr., and J.F. Schetzina, J. Crys. Growth 175/176, 546 (1997).
9. "II-VI Blue/Green Laser Diodes on ZnSe Substrates", Y. S. Park, C. Boney, Z. Yu, W. H. Roland, Jr., W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, Inst. Phys. Conf. Ser. 145, 1169 (1996).
10. "II-VI Blue/Green Laser Diodes on ZnSe Substrates", C. Boney, Z. Yu, W. H. Roland, Jr., W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, J. Vac. Sci. Technol. B 14, 2259 (1996).
11. "II-VI Blue/Green Laser Diodes Grown by MBE on ZnSe Substrates", C. Boney, Z. Yu, W.C. Hughes, W.H. Roland, Jr., J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, J. Electron. Mater. 26, 154 (1996).
12. "Blue/Green Light Emitters Based on II-VI Heterostructures on ZnSe Substrates", C. Boney, D.B. Eason, Z. Yu, W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials (SSDM'95) Osaka, Japan, pp. 665-667 (1995).
13. "Blue-green Laser Diodes on ZnSe Substrates", Z. Yu, C. Boney, W.C. Hughes, W.H. Roland, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, Electron. Lett. 31, 1341 (1995).
14. "High-Brightness II-VI Light-Emitting Diodes Grown by Molecular Beam Epitaxy on ZnSe Substrates", Z. Yu, D. B. Eason, C. Boney, J. Ren, W.C. Hughes, W.H. Rowland, Jr., J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, J. Vac. Sci. Technol. B 13, 711 (1995).
15. "High-Brightness Blue and Green Light-Emitting Diodes", D.B. Eason, Z. Yu, W. C. Hughes, W.H. Rowland, C. Boney, J.W. Cook, Jr., J.F. Schetzina, G. Cantwell, and W.C. Harsch, Appl. Phys. Lett. 66, 115 (1995).
16. "Quaternary II-VI Alloys for Blue and Green Light Emitting Diode Applications", D.B. Eason, Z. Yu, C. Boney, J. Ren, L.E. Churchill, J.W. Cook, Jr., J.F. Schetzina, and N.A. El-Masry, J. Crys. Growth 138, 703 (1994).
17. "Integrated Heterostructure Devices Composed of II-VI Materials with Hg-Based Contact Layers", J. Ren, D. B. Eason, L.E. Churchill, Z. Yu, C. Boney, J.W. Cook, Jr., J.F. Schetzina, and N.A. El-Masry, J. Crys. Growth 138, 455 (1994).
18. "Quaternary II-VI Alloys for Blue/Green Light Emitter Applications", K.A. Bowers, Z. Yu, C. Boney, J. Ren, J.W. Cook, Jr., N.A. El-Masry, and J.F. Schetzina, Proceedings of the 1993 Electronic Materials Conference, Santa Barbara, CA (1993).
19. "Blue/Green Light Emitting Diodes and Laser Diodes Based on II-VI Heterostructures Grown on Pre-Deposited GaAs Buffer Layers", J. Ren, D.B. Eason, Y. Lansari, Z. Yu, K.A. Bowers, C. Boney, B. Sneed, J.W. Cook, Jr., J.F. Schetzina, M.W. Koch, and G.W. Wicks, J. Vac. Sci. Technol. B 11, 955 (1993).
21. "Light Emission From Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys", Z. Yu, J. Ren, Y. Lansari, B. Sneed, K.A. Bowers, C. Boney, D.B. Eason, R.P. Vaudo, K.J. Gosset, J.W. Cook, Jr., and J.F. Schetzina, Jpn. J. Appl. Phys. 32, 663 (1993).
22. "High-Resolution Study of Stimulated Emission from Blue-Green Laser Diodes", Z. Yu, J. Ren, B. Sneed, K.J. Gosset, C. Boney, Y. Lansari, J.W. Cook, Jr., J.F. Schetzina, G.C. Hua, and N. Otsuka, Appl. Phys. Lett. 61, 1266 (1992).