Task Leader: Chih-Hsiang Thompson Lin CHLin@UH.edu

Photodetectors operating at 8-15 micron and beyond are of great importance for IR imaging for both commercial and military applications. InAs/InGaSb type-II quantum wells (QWs) may have advantages over the tradition HgCdTe materials for applications that require higher operating temperature or longer wavelength. With improved MBE growth technology, we have improved the responsivity of type-II photoconductors by a factor > 50, due to the improved interface quality, and reduced defect density and background impurity, and hence the better optical properties and longer carrier lifetime. Photoconductors with cut-off wavelengths up to 15 mm has already been demonstrated.